WHOLESALE COMPUTER PARTS

Specifications

• Mfr Part Number: MZ-76E500E
• Capacity: 500GB
• Form Factor: 2.5 inch
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• Cache Memory: 512MB LPDDR4
• Performance:
  • Sequential Read Speed: Up to 550 MB/s
  • Sequential Write Speed: Up to 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 98K IOPS
  • 4K Random Write Speed (QD32): Up to 90K IOPS
• MTBF: 1.5 Million Hours Reliability
• Power Consumption:
  • Active Read/Write: Max. 4.0 W / Avg. 3.0 W (4TB)
  • Idle: Max. 0.5 W (4TB)
  • Device Sleep: 2 mW (4TB)
• ​Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions (WxDxH): 3.94 x 0.27 x 2.76 inch
• Weight: 0.19 lbs

Specifications

• Mfr Part Number: MZ-76E1T0E
• Capacity: 1TB
• Form Factor: 2.5 inch
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• Cache Memory: 1GB LPDDR4
• Performance:
  • Sequential Read Speed: Up to 550 MB/s
  • Sequential Write Speed: Up to 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 98K IOPS
  • 4K Random Write Speed (QD32): Up to 90K IOPS
• MTBF: 1.5 Million Hours Reliability
• Power Consumption:
  • Active Read/Write: Max. 4.0 W / Avg. 3.0 W (4TB)
  • Idle: Max. 0.5 W (4TB)
  • Device Sleep: 2 mW (4TB)
• Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions (WxDxH): 3.94 x 0.27 x 2.76 inch
• Weight: 0.19 lbs

Specifications

• Mfr Part Number: MZ-76E2T0E
• Capacity: 2TB
• Form Factor: 2.5 inch
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• Cache Memory: 2GB LPDDR4
• Performance:
  • Sequential Read Speed: Up to 550 MB/s
  • Sequential Write Speed: Up to 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 98K IOPS
  • 4K Random Write Speed (QD32): Up to 90K IOPS
• MTBF: 1.5 Million Hours Reliability
• Power Consumption:
  • Active Read/Write: Max. 4.0 W / Avg. 3.0 W (4TB)
  • Idle: Max. 0.5 W (4TB)
  • Device Sleep: 2 mW (4TB)
• Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions (WxDxH): 3.94 x 0.27 x 2.76 inch
• Weight: 0.21 lbs

Specifications

• Mfr Part Number: MZ-76E4T0E
• Capacity: 4TB
• Form Factor: 2.5 inch
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• Cache Memory: 4GB LPDDR4
• Performance:
  • Sequential Read Speed: Up to 550 MB/s
  • Sequential Write Speed: Up to 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 98K IOPS
  • 4K Random Write Speed (QD32): Up to 90K IOPS
• MTBF: 1.5 Million Hours Reliability
• Power Consumption:
  • Active Read/Write: Max. 4.0 W / Avg. 3.0 W (4TB)
  • Idle: Max. 0.5 W (4TB)
  • Device Sleep: 2 mW (4TB)
• Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions (WxDxH): 3.94 x 0.27 x 2.76 inch
• Weight: 0.21 lbs

Specifications

• Mfr Part Number: MZ-75E500E
• Capacity: 500GB
• Form Factor: 2.5 inch
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s & SATA 1.5Gb/s)
• NAND Flash: Samsung 3-bit V-NAND
• Performance:
  • Sequential Read Speed: Up to 540 MB/s
  • Sequential Write Speed: Up to 520 MB/s
  • Random Read Speed: Up to 98K IOPS (4KB, QD32), Up to 10K IOPS (4KB, QD1)
  • Random Write Speed: Up to 90K IOPS (4KB, QD32), Up to 40K IOPS (4KB, QD1)
• Controller: Samsung MGX Controller
• Power Consumption:
  • Average: 3.1 W
  • Maximum: 3.6 W
  • Idle: 70 mW
• Voltage: 5V ± 5%
• MTBF: 1,500,000 hours
• Temperature: 32°F to 158°F (Operating)
• Thickness: 7.0 mm
• Dimensions (WxDxH): 3.94 x 2.75 x 0.27 inch
• Weight: 55.0 g

Specifications

• Mfr Part Number: MZ-75E4T0B/AM
• Capacity: 4TB
• Form Factor: 2.5 inch
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s & SATA 1.5Gb/s)
• NAND Flash: Samsung 48 Layer 3D 3-bit V-NAND
• Performance:
  • Sequential Read Speed: Up to 540 MB/s
  • Sequential Write Speed: Up to 520 MB/s
  • Random Read Speed: Up to 98K IOPS (4KB, QD32), Up to 10K IOPS (4KB, QD1)
  • Random Write Speed: Up to 90K IOPS (4KB, QD32), Up to 40K IOPS (4KB, QD1)
• Controller: Samsung MHX Controller
• Power Consumption:
  • Active Read/Write (Average): 3.1 W / 3.6 W
  • Idle: 70 mW (Max)
  • Device Sleep: 10mW
• Voltage: 5V ± 5%
• MTBF: 1,500,000 hours
• Temperature: 32°F to 158°F (Operating)
• Thickness: 7.0 mm
• Dimensions (WxDxH): 3.94 x 2.75 x 0.27 inch
• Weight: 0.12 lbs

Specifications

• Mfr Part Number: MZ-N6E250BW
• Capacity: 250GB
• Form Factor: M.2 SATA
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• SDRAM Cache Memory: 250GB LPDDR4
• Performance:
  • Sequential Read Speed: 550 MB/s
  • Sequential Write Speed: 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 97K IOPS
  • 4K Random Write Speed (QD32): Up to 88K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Active Read/Write (Average): 2.2 W
  • Maximum: 4.0 W (Burst mode)
• Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions(WxDxH): 3.15 x 0.87 x 0.09 inch

Specifications

• Mfr Part Number: MZ-N6E500BW
• Capacity: 500GB
• Form Factor: M.2 SATA
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• SDRAM Cache Memory: 512MB LPDDR4
• Performance:
  • Sequential Read Speed: 550 MB/s
  • Sequential Write Speed: 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 97K IOPS
  • 4K Random Write Speed (QD32): Up to 88K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Active Read/Write (Average): 2.5 W
  • Maximum: 4.0 W (Burst mode)
• Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions(WxDxH): 3.15 x 0.87 x 0.09 inch

Specifications

• Mfr Part Number: MZ-N6E1T0BW
• Capacity: 1TB
• Form Factor: M.2 2280
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• DRAM Cache Memory: 1GB LPDDR4
• Performance:
  • Sequential Read Speed: 550 MB/s
  • Sequential Write Speed: 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 97K IOPS
  • 4K Random Write Speed (QD32): Up to 88K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Idle (DIPM on): 50 mW
  • Active Read/Write (Average): 3 W
  • Device Sleep: 2mW
• Shock: 1500G, duration - 0.5m, 3 axis (Non-Operating)
• Vibration: 20~2,000Hz, 20G (Non-Operating)
• Temperature: 0°C to 70°C (Operating); -45°C to 85°C (Non-Operating)
• Dimensions: 80.15x 22.15 x 2.38 mm (Max)

Specifications

• Mfr Part Number: MZ-N6E2T0BW
• Capacity: 2TB
• Form Factor: M.2 SATA
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash Memory: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• Cache Memory: Samsung 2 GB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: 550 MB/s
  • Sequential Write Speed: 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 97K IOPS
  • 4K Random Write Speed (QD32): Up to 88K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 3.0 W
  • Maximum: 4.5 W (Burst mode) 
• Shock: 1,500G & 0.5ms (Half sine)
• Temperature: 0°C to 70°C (Operating)
• Dimensions (WxDxH): 3.15 x 0.87 x 0.09 inch
• Weight: 0.18 lbs

Specifications

• Mfr Part Number: MZ-M6E250BW
• Capacity: 250GB
• Form Factor: mSATA
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash Memory: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• DRAM Cache Memory: 512MB LPDDR4
• Performance:
  • Sequential Read Speed: 550 MB/s
  • Sequential Write Speed: 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 97K IOPS
  • 4K Random Write Speed (QD32): Up to 88K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Idle (DIPM on): 50 mW
  • Active Read/Write (Average): 2.2 W
  • Device Sleep: 2 mW
• Shock: 1500G, duration - 0.5m, 3 axis (Non-Operating)
• Vibration: 20~2,000Hz, 20G (Non-Operating)
• Temperature: 0°C to 70°C (Operating); -45°C to 85°C (Non-Operating)
• Dimensions: (29.85±0.15) x (50.80±0.15) x 3.85 (Max) mm

Specifications

• Mfr Part Number: MZ-M6E500BW
• Capacity: 500GB
• Form Factor: mSATA
• Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
• NAND Flash Memory: Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• DRAM Cache Memory: 512MB LPDDR4
• Performance:
  • Sequential Read Speed: 550 MB/s
  • Sequential Write Speed: 520 MB/s
  • 4K Random Read Speed (QD1): Up to 10K IOPS
  • 4K Random Write Speed (QD1): Up to 42K IOPS
  • 4K Random Read Speed (QD32): Up to 97K IOPS
  • 4K Random Write Speed (QD32): Up to 88K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Idle (DIPM on): 50 mW
  • Active Read/Write (Average): 2.5 W
  • Device Sleep: 2 mW
• Shock: 1500G, duration - 0.5m, 3 axis (Non-Operating)
• Vibration: 20~2,000Hz, 20G (Non-Operating)
• Temperature: 0°C to 70°C (Operating); -45°C to 85°C (Non-Operating)
• Dimensions: (29.85±0.15) x (50.80±0.15) x 3.85 (Max) mm

Specifications

• Mfr Part Number: MZ-V7E250E
• Capacity: 250GB
• Form Factor: M.2 2280
• Interface: PCIe Gen 3.0 x4, NVMe 1.3
• NAND Flash: Samsung V-NAND 3-bit MLC
• Controller: Samsung Phoenix Controller
• Cache Memory: Samsung 512MB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: Up to 3,400 MB/s
  • Sequential Write Speed: Up to 1,500 MB/s
  • 4K Random Read Speed (QD1): Up to 15K IOPS
  • 4K Random Write Speed (QD1): Up to 50K IOPS
  • 4K Random Read Speed (QD32): Up to 200K IOPS
  • 4K Random Write Speed (QD32): Up to 350K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 5.4W
  • Maximum: 9W (Burst mode)
  • Idle: 30mW (max)
• Shock: 1,500 G & 0.5 ms (Half sine)
• Temperature: 0 - 70 °C Operating Temperature
• Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
• Weight: 8.0 g (Max)

Specifications

• Mfr Part Number: MZ-V7E500E
• Capacity: 500GB
• Form Factor: M.2 2280
• Interface: PCIe Gen 3.0 x4, NVMe 1.3
• NAND Flash: Samsung V-NAND 3-bit MLC
• Controller: Samsung Phoenix Controller
• Cache Memory: Samsung 512MB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: Up to 3,400 MB/s
  • Sequential Write Speed: Up to 2,300 MB/s
  • 4K Random Read Speed (QD1): Up to 15K IOPS
  • 4K Random Write Speed (QD1): Up to 50K IOPS
  • 4K Random Read Speed (QD32): Up to 370K IOPS
  • 4K Random Write Speed (QD32): Up to 450K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 5.7W
  • Maximum: 10W (Burst mode)
  • Idle: 30mW (max)
• Shock: 1,500 G & 0.5 ms (Half sine)
• Temperature: 0 - 70 °C Operating Temperature
• Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
• Weight: 8.0 g (Max)

Specifications

• Mfr Part Number: MZ-V7E1T0E
• Capacity: 1TB
• Form Factor: M.2 2280
• Interface: PCIe Gen 3.0 x4, NVMe 1.3
• NAND Flash: Samsung V-NAND 3-bit MLC
• Controller: Samsung Phoenix Controller
• Cache Memory: Samsung 1GB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: Up to 3,400 MB/s
  • Sequential Write Speed: Up to 2,500 MB/s
  • Random Read Speed (QD1): Up to 15K IOPS
  • Random Write Speed (QD1): Up to 50K IOPS
  • Random Read Speed (QD32): Up to 500K IOPS
  • Random Write Speed (QD32): Up to 450K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 6.0W
  • Maximum: 10W (Burst mode)
  • Idle: 30mW (max)
• Shock: 1,500 G & 0.5 ms (Half sine)
• Temperature: 0 - 70 °C Operating Temperature
• Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
• Weight: 8.0 g (Max)

Specifications

• Mfr Part Number: MZ-V7E2T0E
• Capacity: 2TB
• Form Factor: M.2 2280
• Interface: PCIe Gen 3.0 x4, NVMe 1.3
• NAND Flash: Samsung V-NAND 3-bit MLC
• Controller: Samsung Phoenix Controller
• Cache Memory: Samsung 2GB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: Up to 3,500 MB/s
  • Sequential Write Speed: Up to 2,500 MB/s
  • Random Read Speed (QD1): Up to 15K IOPS
  • Random Write Speed (QD1): Up to 50K IOPS
  • Random Read Speed (QD32): Up to 500K IOPS
  • Random Write Speed (QD32): Up to 480K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 6W
  • Maximum: 10W (Burst mode)
  • Idle: 30mW (max)
• Shock: 1,500 G & 0.5 ms (Half sine)
• Temperature: 0 - 70 °C Operating Temperature
• Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
• Weight: 8.0 g (Max)

Specifications

• Mfr Part Number: MZ-V7P512E
• Capacity: 512GB
• Form Factor: M.2 2280
• Interface: PCIe Gen 3.0 x4, NVMe 1.3
• NAND Flash: Samsung V-NAND 2-bit MLC
• Controller: Samsung Phoenix Controller
• Cache Memory: Samsung 512MB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: Up to 3,500 MB/s
  • Sequential Write Speed: Up to 2,300 MB/s
  • Random Read Speed (QD1): Up to 15K IOPS
  • Random Write Speed (QD1): Up to 55K IOPS
  • Random Read Speed (QD32): Up to 370K IOPS
  • Random Write Speed (QD32): Up to 500K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 5.2W
  • Maximum: 8.5W (Burst mode)
  • Idle: 30mW (max)
• Shock: 1,500 G & 0.5 ms (Half sine)
• Temperature: 0 - 70 °C Operating Temperature
• Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
• Weight: 8.0 g (Max)
  

Specifications

• Mfr Part Number: MZ-V7P1T0E
• Capacity: 1TB
• Form Factor: M.2 2280
• Interface: PCIe Gen 3.0 x4, NVMe 1.3
• NAND Flash: Samsung V-NAND 2-bit MLC
• Controller: Samsung Phoenix Controller
• Cache Memory: Samsung 1GB Low Power DDR4 SDRAM
• Performance:
  • Sequential Read Speed: Up to 3,500 MB/s
  • Sequential Write Speed: Up to 2,700 MB/s
  • Random Read Speed (QD1): Up to 15K IOPS
  • Random Write Speed (QD1): Up to 55K IOPS
  • Random Read Speed (QD32): Up to 500K IOPS
  • Random Write Speed (QD32): Up to 500K IOPS
• MTBF: 1,500,000 hours
• Power Consumption:
  • Average: 5.2W
  • Maximum: 8.5W (Burst mode)
  • Idle: 30mW (max)
• Shock: 1,500 G & 0.5 ms (Half sine)
• Temperature: 0 - 70 °C Operating Temperature
• Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
• Weight: 8.0 g (Max)
  

Specifications

• Mfr Part Number: MZ-V6E250BW
  
• Capacity: 250GB
  
• Form Factor: NVMe M.2
  
• Interface: PCIe 3.0 x4, NVMe 1.2 (partial)
  
• NAND Flash: V-NAND
  
• Controller: Samsung Polaris Controller
  
• Performance:
  • Sequential Read Speed: Up to 3,200 MB/s
    
  • Sequential Write Speed: Up to 1,500 MB/s
    
  • 4K Random Read Speed (QD1): Up to 14K IOPS
    
  • 4K Random Write Speed (QD1): Up to 50K IOPS
    
  • 4K Random Read Speed (QD32): Up to 330K IOPS
    
  • 4K Random Write Speed (QD32): Up to 300K IOPS
    
• MTBF: 1,500,000 hours
  
• Power Consumption: Average - 5.3W; Idle - 1.2W (ASPT off)
  
• Shock: 1500G, duration 0.5m sec, 3 axis
  
• Temperature: 0°C to 70°C
  
• Dimensions (WxDxH): 80.15 x 22.15 x 2.38 mm
  
• Weight: 7.7 g
  

Specifications

• Mfr Part Number: MZ-V6E500BW
  
• Capacity: 500GB
• Form Factor: NVMe M.2
  
• Interface: PCIe 3.0 x4, NVMe 1.1
  
• NAND Flash: V-NAND
  
• Controller: Samsung Polaris Controller
  
• Performance:
  • Sequential Read Speed: Up to 3,200 MB/s
    
  • Sequential Write Speed: Up to 1,800 MB/s
    
  • 4K Random Read Speed (QD1): Up to 14K IOPS
    
  • 4K Random Write Speed (QD1): Up to 50K IOPS
    
  • 4K Random Read Speed (QD32): Up to 330K IOPS
  • 4K Random Write Speed (QD32): Up to 330K IOPS
    
• MTBF: 1,500,000 hours
  
• Power Consumption: Average - 5.4W; Idle - 1.2W (ASPT off)
• Shock: 1500G, duration 0.5m sec, 3 axis
  
• Temperature: 32°F - 158°F
• Dimensions (WxDxH): 3.15 x 0.87 x 0.09 inch
  
• Weight: 0.02 lbs